Speaking of RAM, MRAM hasn't done much since the NVEC hype. Cyprus gave up and their subsidiary is for sale with no buyers. Supposedly, freescale is farthest ahead and is sampling or some such. In lieu of results, my interest has waned. The memory of the future, always has been, always will be, just like fusion? Or will it really happen someday? Anyone know the status?
Too bad really, I'm bored with watching my computers boot up everday. The dancing icons were fun the first time, after a few thousands of times......
"Freescale Semiconductor Inc. presented an MRAM that uses magnesium oxide, rather than an aluminum material, in the write layer. Saied Tehrani, director of MRAM technology, said Freescale will replace aluminum oxide with magnesium oxide, which will improve the bit resistance during the write cycle. Also, the tunneling layer can be thinned slightly.
Sony Corp. went to IEDM with a spin-type MRAM, which also sharply reduces the MRAM write current — the Achilles' heel of the MRAM approach thus far (see story, page 26). Spin RAM takes advantage of the spin torque of electrons to achieve a 2-nanosecond switching speed at about 300 microamperes of power — about 5 percent of the power needed to switch a conventional MRAM cell."
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