Replies to post #220738 on Lightwave Logic Inc (LWLG)

[tedpeele]

doesn't require poling. I'm not advocating or saying anything - just looking at what Mark is talking about - prompted from daniels post this morning.

“The need for high speed, efficient, and small footprint solutions for optical data transmission is growing rapidly. This breakthrough places our technology as a key enabler of the continued scale up of data centers," said Jason Sickler, CEO of Polaris Electro-Optics, Inc. "The technology integrates seamlessly with silicon photonic wafers post-foundry, does not require poling, and is robust and stable. This makes possible faster, smaller, and more efficient photonic chips made using standard processes at any foundry. No other technology offers that." This technology is poised to become the preferred solution for pluggable transceivers and future optical interconnect platforms.

https://polariseo.com/assets/files/press-release-2024-09-25-polaris-electro-optics-inc-demonstrates-groundbreaking-102-gbps-pam-4-silicon-photonic-modulator-technology.pdf

[prototype_101]

Ha!! Too funny!! the Short mob/cult leader Mark Lutkowitz putting out another "hit piece" there are many here who still believe he was involved in the kerrisdale klown kar Short report a couple years back, remember when he mysteriously showed up in the middle of the night to deny it!! If he was involved, it will come to light just like the dirty dealings of other paid Shorts here!!! The company he is now touting is a tiny startup that is NOWHERE near commercialization, get back to me in 10 years and let me know how their developments are going!!!!

Thin-Film LiNbO3 (TFLN) versus LWLG Electro-optic Polymers

Performance

Thin-Film LiNbO3 (TFLN)
- r33 intrinsically capped at ~ 31 pm/V at 1310 nm
- n = 2.2, er = 30 (high dispersion across frequencies)

LWLG Electro-optic Polymers
- No intrinsic cap on r33 (> 200 pm/V at 1310 nm easily achieved)
- n ˜ 1.9, er ˜ 3-6 (low dispersion across frequencies)

Integration

Thin-Film LiNbO3 (TFLN)
- Integration with Si/SiN very low yielding & basically still in R&D stage
- Limited wafer size (150 mm)
- Large device footprint (sub-cm scale)
- High material cost w/ only one supplier (NanoLN)

LWLG Electro-optic Polymers
- Fully Si compatible
- Easily scalable to 300 (+) mm wafer
- Very small device footprint (sub-mm scale)
- Low material cost

Processing

Thin-Film LiNbO3 (TFLN)
- Thin film uniformity becomes difficult as wafer size scales up
- Specialized processing/tools needed – leads to higher costs
associated with processing, QC, etc.

LWLG Electro-optic Polymers
- Spin-coating produces films with high uniformity
- No specialized processing/tools needed (completely compatible
with existing Si foundry processes/tools) – reduces costs
associated with processing, QC, etc

Slide 13 from 2025 LWLG ASM presentation found here,
https://irp.cdn-website.com/a5f8ef96/files/uploaded/2025_ASM_Presentation_-_FINAL-40e13d6a.pdf

Where are you Mark Lutkowitz? Here I even DETAILED the differences Yves pointed out on Slide 13 here for you!!!!