Replies to post #217156 on Lightwave Logic Inc (LWLG)

[prototype_101]

Thin-Film LiNbO3 (TFLN) versus LWLG Electro-optic Polymers

Performance

Thin-Film LiNbO3 (TFLN)
- r33 intrinsically capped at ~ 31 pm/V at 1310 nm
- n = 2.2, er = 30 (high dispersion across frequencies)

LWLG Electro-optic Polymers
- No intrinsic cap on r33 (> 200 pm/V at 1310 nm easily achieved)
- n ˜ 1.9, er ˜ 3-6 (low dispersion across frequencies)

Integration

Thin-Film LiNbO3 (TFLN)
- Integration with Si/SiN very low yielding & basically still in R&D stage
- Limited wafer size (150 mm)
- Large device footprint (sub-cm scale)
- High material cost w/ only one supplier (NanoLN)

LWLG Electro-optic Polymers
- Fully Si compatible
- Easily scalable to 300 (+) mm wafer
- Very small device footprint (sub-mm scale)
- Low material cost

Processing

Thin-Film LiNbO3 (TFLN)
- Thin film uniformity becomes difficult as wafer size scales up
- Specialized processing/tools needed – leads to higher costs
associated with processing, QC, etc.

LWLG Electro-optic Polymers

- Spin-coating produces films with high uniformity
- No specialized processing/tools needed (completely compatible
with existing Si foundry processes/tools) – reduces costs
associated with processing, QC, etc

Slide 13 from 2025 LWLG ASM presentation found here,
https://irp.cdn-website.com/a5f8ef96/files/uploaded/2025_ASM_Presentation_-_FINAL-40e13d6a.pdf

Where are you Mark? Here I even DETAILED the differences Yves pointed out on Slide 13 here for you!!!!