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mas

Re: wbmw post# 112414

Monday, 10/08/2012 12:21:12 PM

Monday, October 08, 2012 12:21:12 PM

Post# of 152300
This was already known from the previous Forbes article posted here. It's a ploy to quickly get the low leakage effects of 14nm FinFET transistors on a 20nm planar process. It is a hybrid process and should be labeled as a 14/20nm or 14-20nm process in non marketing discussions.
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