Zeev, can I borrow your physicist :>) <g>. My DD indicated that their are two different schemes for MRAM.
1. Giant Magnetoresistive (GMR) type, "spin electronics". This is the nvec, cy, mot type.
2. Then, there is Tunneling Magnetic Resistance type, whatever that is. I believe that this is the IBM type.
I can find info on the net that talks about the physics of these types in more and less comprehensibility and I can even understand electron spin and spin flipping. What I haven't been able to do is figure out how different these are and which scheme will ultimately win. The problems seem mostly to do with bit density and fabrication yields and they are rate limiting.
FWIW, there is no doubt that GMR works to store digital information. This is the medium and technique behind modern hard drives. While I type this, a hard drive with magnetic storage of the GMR type is spinning away near my keyboard. While this is immaterial to whether NVEC goes to 50 or 20 next week, it could be useful for future reference. MRAM is a long term (decade) growth or disaster story. Thanks in advance.
PS What could derail it is if Intel ever gets holographic storage to work for small chips. CD's are also nonvolatile.
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