http://www.eetimes.com/rss/showArticle.jhtml?articleID=223300174 SAN JOSE, Calif. -- In a major departure, South Korea's Samsung Electronics Co. Ltd. is reportedly exploring an alternative in high-k dielectrics: It is looking at gate-last technology, according to sources.
If the reports are true, this would be a major departure from Samsung's original position. The gate-first technology was developed and is now being touted by IBM Corp.'s ''fab club.'' IBM, Infineon, GlobalFoundries, NEC, Samsung, ST, Toshiba and others are part of IBM's technology alliance.
IBM, GlobalFoundries and Samsung are co-developing foundry processes and will roll out a gate-first, high-k offering this year. So far, though, IBM's camp, which includes Advanced Micro Devices Inc. (AMD), has not rolled out a high-k/metal-gate offering.
The camp is far behind Intel Corp., which has shipped 45- and 32-nm processors based on its gate-last, high-k technology.
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