MG/Hi-K stacks - which come at a price: It significantly increases variation. What you get out of such a DFM are couple of parts with very nice characteristics on the upper end..
I agree with chipguy that this statement is nonsense. It is a typical "grapes are sour" statement from someone who does not have the technology today.There is no fundamental physical basis for the statement. The High K dielectric allows a much thicker dielectric film than traditional Silicon dioxide films, which are only a few atoms thick for 65nm devices. The process control on a thicker film HiK film will be far superior.
But I am sure that the new technology is tricky for a new comer.It probably cannot be made in volume at IBM and AMD yet, because they do not have the experience.Intel has been running the process in the Lab and the Pilot Lines for several years. Intel has a secret metal composition for making the gate, and also secret recipes for processing the gates. In a few years time others will also develop the necessary process technology.
If your statement was true Intel will also be introducing an extremely large number of low performance parts. I see no evidence of that, and I bet that there will not be significant number of low performance parts
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