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Quikshft

12/18/22 10:15 PM

#40389 RE: joanders #40388

This is the abstract from the patent;

A silicon nitride (SiNx) based anode is produced by combining a silicon precursor that includes cyclohexasilane and a nitrogen precursor. A doped silicon based anode is produced by combining a silicon precursor that includes cyclohexasilane and a dopant precursor selected from a boron precursor, a nitrogen precursor, a sulfur precursor, an aluminum precursor, a phosphorous precursor, and combinations thereof. Silicon nanowires are produced by depositing metallic nanoparticles on surfaces of carbon support particles and then depositing silicon from cyclohexasilane onto the carbon support particles. The silicon preferentially deposits onto the metallic nanoparticles to form silicon nanowires that extend off of the metallic nanoparticle away from the surfaces.