alan
good to see you still around, to begin with.
Many thanks for retrieving data and posting it. As for your comments, PMOS/NMOS characteristics is just a part of the equation, insofar these data per se do not allow a compehensive assessment of the nodes. Pretty much d'accord with remainder of your comments.
From today's news, I see AMD/IBM is using Al for interconnect layer one in 45nm, and apparently in 65nm as well. Just curious, do you happen to know Intel does as well? And/or the reason for it?
On Litho, I do remember weakly Intel considered double exposure a long while ago, are they already doing so or said something about if they still have it in mind recently?
TIA
K.
p.s: Hi to everybody, in particular those I did not meet alread since i'm back.