Intel Corp (INTC)

[SemiconEng]

SI's preliminary analysis has confirmed the presence of seven levels of copper metalization and revealed several industry firsts, including an advanced nickel - silicide process on the transistor gates, a strained silicon SiGe layer to improve channel mobility, and uniquely customized PMOS and NMOS devices. The process also confirms Intel's stated position that SOI is unnecessary to achieve high performance.


I notice the Layer descriptions seem very detailed. I had read somewhere else, that intel had worked on nickel salicide way back when, but never got it working. Appears they finally did. Also, Sounds like SI got their hands on a Prescott and either did a cross sectional analysis, or peeled back the layers. 7 Layer metal huh? Up 1 from 0.13u. I Wonder what sort of speed path improvement would be achieved if they added additional Metal Layers, vs. the additional defect issue. Think it would be worth it to go for 8 layer?

Semi