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Tuesday, December 19, 2023 5:31:30 AM
In the 2023 fiscal year, a new production building with a gross floor area of around 6,000m 2 was commissioned for additional production and development of SiC and GaN products. This complements existing production areas for products based on these new semiconductor materials. Particularly noteworthy in this new building, in addition to the volume production, is the unique implementation of a development area directly in the production environment: on a gross floor area of around 1,000 m 2 there is now a competence center that focuses on a central production step in the manufacture of SiC and GaN chips, the so-called epitaxy. Research is now being conducted here on system evaluations and the transfer to the largest possible wafer diameters. This close integration of research and production enables Infineon to accelerate innovations in this area, test new system concepts at an early stage and thus work even more effectively on new solutions for tomorrow. The semiconductor materials SiC and GaN are increasingly used in energy-efficient applications such as solar systems, electric cars, charging stations, data centers and energy storage systems. They switch electricity even more efficiently and enable even smaller designs.
https://www.infineon.com/cms/austria/en/press/GJ2324/Bilanz-Geschaeftsjahr_23.html
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