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Re: Testpilot post# 40358

Wednesday, 11/23/2022 11:17:09 AM

Wednesday, November 23, 2022 11:17:09 AM

Post# of 43052
Disilane used here in work with Erik Bakkers coretecs CHS listed on a chart as better than Disilane Si2H6 under technologies

https://iopscience.iop.org/article/10.1088/1361-6528/ac9317

Experimental details
The wurtzite trunk GaP wires have been grown following references [31, 32] in a close-coupled showerhead reactor by Aixtron. The branches have been grown in the same MOVPE reactor at a total pressure of 50 mbar, and a total gas flow of 6200 sccm. After deposition of the Au particles on the GaP trunk wires, the samples are annealed at 710 °C for 1 min. For the growth of the branches the samples are cooled to 650 °C and exposed to 1% GeH4/H2 and 1% Si2H6/H2. [/b]The total group IV input flow is between 190 and 300 sccm.The input flux ratio of the precursors determines the chemical composition of the branches. The branches are grown for 6 or 6 and a half minutes.
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