SCIENCE SPIN-OFFS

[puravida19]

High-Performance Quantum-Dot Light-Emitting Transistors Based on Vertical Organic Thin-Film Transistors

In this work, a novel vertical quantum-dot light-emitting transistor (VQLET) based on a vertical organic thin-film transistor is successfully fabricated. Benefiting from the new vertical architecture, the VQLET is able to afford an extremely high current density, which allows most of the organic thin film transistors (OTFT) even with low mobility (for instance, poly(3-hexylthiophene)) to drive a quantum-dot light-emitting diode (QLED), which was previously unavailable. Moreover, the hole injection barrier could be modulated by the additional gate electrode, which precisely optimizes the charge balance in the device, a critical issue in QLED, resulting in the precise control of current density and brightness of the VQLET. The VQLET shows a high performance with a maximum current efficiency of 37 cd/A. Furthermore, integrating OTFT and QLED into a single device, the VQLET features drastic advantages by realizing active matrix quantum-dot light-emitting diodes (AMQLEDs), which significantly reduces the number of transistors and frees the large area fraction occupied by transistors. Hence, these results indicate that the VQLET provides a new strategy for realizing a low-cost, solution-processed, high-performance OTFT-AMQLED for the flat panel display technology. Moreover, the novel design offers a unique method to exquisitely control the charge balance and maximize the efficiency the QLED.
In this work, a novel vertical quantum-dot light-emitting transistor (VQLET) based on a vertical organic thin-film transistor is successfully fabricated. Benefiting from the new vertical architecture, the VQLET is able to afford an extremely high current density, which allows most of the organic thin film transistors (OTFT) even with low mobility (for instance, poly(3-hexylthiophene)) to drive a quantum-dot light-emitting diode (QLED), which was previously unavailable. Moreover, the hole injection barrier could be modulated by the additional gate electrode, which precisely optimizes the charge balance in the device, a critical issue in QLED, resulting in the precise control of current density and brightness of the VQLET. The VQLET shows a high performance with a maximum current efficiency of 37 cd/A. Furthermore, integrating OTFT and QLED into a single device, the VQLET features drastic advantages by realizing active matrix quantum-dot light-emitting diodes (AMQLEDs), which significantly reduces the number of transistors and frees the large area fraction occupied by transistors. Hence, these results indicate that the VQLET provides a new strategy for realizing a low-cost, solution-processed, high-performance OTFT-AMQLED for the flat panel display technology. Moreover, the novel design offers a unique method to exquisitely control the charge balance and maximize the efficiency the QLED.

https://pubs.acs.org/doi/suppl/10.1021/acsami.9b11198