XNRGI Inc fka NPWZ

[ShortonCash]

XNGRI's atomic scale production ? source of wafers?

same time frame as Neah's first battery claims

http://xnrgi.com/media/

SOITEC AND SCREEN COLLABORATE TO DELIVER ATOMIC-SCALE UNIFORMITY ON 300MM FD-SOI SUBSTRATES
Ability to Mass Produce FD-SOI Substrates Enables Cost-Efficient Fabrication

of High-Performance Semiconductor Devices

Two industry leaders collaborate to produce atomic-scale uniformity substrates

http://inpublic.globenewswire.com/releaseDetails.faces?rId=1938057



Santa Clara, Calif., and Bernin (Grenoble), France, Sept. 19, 2017 -- GLOBALFOUNDRIES and Soitec today announced that they have entered into a five-year agreement to ensure the volume supply of state-of-the-art fully depleted silicon-on-insulator (FD-SOI) wafers. This agreement extends the current partnership to provide a solid foundation for both companies to strengthen the FD-SOI supply chain and help ensure high-volume manufacturing.


Santa Clara, Calif., and Bernin (Grenoble), France, Sept. 19, 2017 -- GLOBALFOUNDRIES and Soitec today announced that they have entered into a five-year agreement to ensure the volume supply of state-of-the-art fully depleted silicon-on-insulator (FD-SOI) wafers. This agreement extends the current partnership to provide a solid foundation for both companies to strengthen the FD-SOI supply chain and help ensure high-volume manufacturing.


Atomic-level control of SOI substrate top silicon thickness enables an excellent control of transistor geometry, key for fully depleted technology. This collaborative success not only maximizes FD-SOI substrate yields, but also represents another step in strengthening the global FD-SOI ecosystem.

[img][https://i.imgur.com/kHFGBw1.jpg/img]





The ability to create uniform layers of channel silicon ensures FD-SOI device performance and optimal electrical characteristics on all wafers surface. FD-SOI technology leverages starting wafers - on which circuits are built - consisting of an ultra-thin layer of top silicon over a thin buried oxide, with extremely tight control of top silicon uniformity to within just a few atoms. These layers form the active layers in the final transistor, and therefore must be as free of defects and as planar as possible.

Using Soitec’s Smart Cut™ technology and SCREEN ‘s cost-efficient, proven robust single wafer-cleaner processing equipment compliant with FD-SOI manufacturing requirements, Soitec is able to consistently produce highly uniform FD-SOI wafers and will be able to do it in sufficient volume to meet the global semiconductor industry’s market demand. FD-SOI enables high performance and power-efficiency for cost-sensitive processors in mobile, consumer, automotive and networking markets.

Our strategic partnership with SCREEN enables us to produce ultra-thin FD-SOI substrates that meet chip makers' challenging requirements of atomic level resolution in high volume manufacturing. Our FD-SOI wafers are already qualified by a number of foundries,

Key advantages of the system include highly uniform chamber-to-chamber processing and cycle times for robust results, tight control of layer thicknesses, the elimination of defects and metal contamination and high productivity enabled by a versatile chemical-supply system.