Wednesday, May 30, 2018 1:40:37 PM
Anode is limiting the industry. XNRGI has solved that limitation using lithium metal anode.
https://archive.eetasia.com/www.eetasia.com/ART_8800683512_480100_NT_cdc559e0.HTM
We may not see 3D chip stacks for next-gen smartphones until 2015 or later. We can, however, expect new chip designs for tablets using the much simpler 2.5D stacking techniques by late next year.
The good and bad news comes as Globalfoundries Inc. announced its first functional wafers with through silicon vias (TSVs) using the 20nm process at its Fab 8 in New York. TSVs form the connections between chips in a 3D stack, and Globalfoundries hopes to be an early implementer of the technology.
A year ago, Globalfoundries announced it was installing equipment at Fab 8 worth "tens of millions" in hopes of shipping 28- and 20nm 3D chip stacks in 2014. Now, it says it only expects to use the 20nm process for 3D chips that may not ship in volume until 2015 or later.
However, the foundry does appear to be accelerating work in 65nm at its Singapore Fab 7 on 2.5D stacks that put chips side-by-side on a silicon interposer for a range of uses
https://archive.eetasia.com/www.eetasia.com/ART_8800683512_480100_NT_cdc559e0.HTM
We may not see 3D chip stacks for next-gen smartphones until 2015 or later. We can, however, expect new chip designs for tablets using the much simpler 2.5D stacking techniques by late next year.
The good and bad news comes as Globalfoundries Inc. announced its first functional wafers with through silicon vias (TSVs) using the 20nm process at its Fab 8 in New York. TSVs form the connections between chips in a 3D stack, and Globalfoundries hopes to be an early implementer of the technology.
A year ago, Globalfoundries announced it was installing equipment at Fab 8 worth "tens of millions" in hopes of shipping 28- and 20nm 3D chip stacks in 2014. Now, it says it only expects to use the 20nm process for 3D chips that may not ship in volume until 2015 or later.
However, the foundry does appear to be accelerating work in 65nm at its Singapore Fab 7 on 2.5D stacks that put chips side-by-side on a silicon interposer for a range of uses
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