* OPEL Technologies Inc .* * * *
(Read this Corporate Presentation for 2011 & 2012:)
OPEL Technologies Inc. (formerly known as OPEL Solar (International) Inc.), is a company with Headquarters in Shelton CT USA, Canada office in Toronto Ontario and an Office located in Brussels Belgium, for Europe, the Middle East & Africa, and an Asia connection thru a Joint Venture.
Through ODIS, OPEL Defense Integrated Systems Inc. the Company designs infrared sensor type products for military, industrial and commercial applications. ODIS Inc. with its R&D facilities located on the campus of the University of Connecticut, has developed and proven a new Optoelectronics semiconductor process called POET (Planar OptoElectronic Technology), which is uniquely capable of producing monolithic IC solutions to meet the emerging needs of both the Military and Commercial markets. Which requires the need for high volume, rapidly growing optoelectronics, wireless and sensors which demand greater bandwidth, increase processing power and integration, with lower power dissipation while being cost effective.
The Company, through its subsidiary, Opel Inc., is engaged in the development and marketing of concentrating solar panels, single and dual axis solar tracking systems for commercial applications, and the development of a gallium arsenide microchip for numerous applications, including solar cells. The Company designs, manufactures and markets high performance photovoltaic concentrating (HCPV) panels to transform solar energy into electricity for worldwide application. In addition, it manufactures and markets a line of single and dual axis solar trackers. These tracker systems can be used to mount all types of solar panels, (silicon, thin film, and HCPV) on ground mounted arrays or roof mounted systems.
Opel was founded in December 2000. It received its first two government contract awards in 2001, for an aggregate of US$1.07 million. During 2001, Opel demonstrated its first thyristor operation (electrical only) and obtained two patents. Since then, Opel has been granted a total of $5,230,000 in government contracts. Opel has filed a total of 50 patents of which 36 have been granted to date. The Company was incorporated in the Province of Ontario and continued in the Province of New Brunswick on January 30, 2007. On September 26, 2006, the shareholders of the Company approved a capital transaction agreement with Opel Inc. ("Opel") a private, technology company, incorporated under the laws of Delaware. The capital transaction was accounted for as a reverse take over ("RTO"). On June 8, 2007, the Company completed a private placement of US$10.7 million, which exceededthe requirements of liquidity for listing on the Toronto Venture Exchange, "TSXV". Subsequently,on June 26, 2007, the Company's shares began trading under the symbol "OPL" on the TSXV. OPEL Technologies Inc. also trades on the OTC as OPELF & on the Alpha exchange as OPL.
*********************** Annual Information Form:
*********************** ODIS, Inc. - Business Overview:
ODIS Inc. (OPEL Defense Iintegrated Systems Inc.) with its R&D facilities located on the campus of the University of Connecticut
has developed and proven a new Optoelectronics semiconductor process based on a new Group III-V materials system.
This process POET (Planar OptoElectronic Technology) is uniquely capable of producing monolithic IC solutions to meet the
emerging needs of both the Military and Commercial markets, POET allows ODIS to produce ICs with dense packing of active optical elements together with packing of high-performance electronic elements at a density similar to that of silicon. These monolithic implementations have a large advantage over today's hybrid-based solutions in density, reliability, and power dissipation, at a cost much lower than the best available competitors. ODIS will produce a market dislocation by providing monolithic IC components for these high volume high-performance markets with high-reliability, smaller, lower-power components at disruptively lower prices. POET is differentiated from competing semiconductor processes, silicon, gallium arsenide, or indium phosphide by its more comprehensive set of elemental capabilities, and its ability to integrate them. POET can integrate lasers, modulators, photoreceivers, passive optics and high-speed, low-power electronics in monolithically-fabricated die: "no other existing process can do so".
This gives ODIS ICs their much lower cost structure, power savings and increased reliability.
Patent and Trade Secret Protection on POET, plus ODIS's specific design knowledge using POET elements give ODIS a large, defensible barrier to competition.
ODIS, INC. INTELLECTUAL PROPERTY APPRAISAL SERVICES REPORT:
ODIS is an early-stage technology company that is developing gallium arsenide based processes and semiconductor microchip products having several potential major market applications: solar concentrator cells and panels for use in power grid applications and commercial rooftops, infrared sensor arrays for security monitoring and imaging along with the unique combination of optical (lasers), servers and routers, and electronic control circuits on the same microchip for telecommunication applications such as Fiber To The Home ("FTTH").
The use of gallium arsenide as the key material in Opel's solar cell development will permit the use of these cells under solar concentration with greatly increased output compared to flat plate solar collector designs done in silicon, as presently used. Opel has been awarded several US Department of Defense projects since 2000. These have been and continue today to support Opel's Planar Opto-Electronic Technology ("POET") process development, infrared sensing technology, optical/laser development and the combination of electronic circuits and lasers on the same microchip. Opel remains active in this area with several recent projects underway with the US Department of Defense.
The solar cell development is based on the use of gallium arsenide chips being designed by OPEL which when ready, will be processed by the Canadian Photonics Fabrication Center ("CPFC") which is a part of the Canadian National Research Centre in Ottawa, Canada. The following development phase of an Opel solar cell multi-junction development will be based on a variation of Opel's POET technology after the transfer is complete from Opel's University of Connecticut ("UCONN") Laboratory to a qualified fabrication source such as CPFC in Ottawa or BAE Systems. This variation will include an adjusted transistor design from the present POET process. Audio of UCONN Lab Tour POET Fabrication Part 1:
http://www.youtube.com/watch?v=8vwEpeyBScI&feature=youtu.be Audio of UCONN Lab Tour POET Fabrication Part 2: http://www.youtube.com/watch?v=B_fTMAcyf-4&feature=youtu.be
ODIS's new and patented semiconductor fabrication process, POET is based on a unique Group III-V materials structure.
The heart of POET is a unique and patented Group III-V materials system that supports monolithic fabrication of IC's containing active and passive optical elements, together with high-performance analog and digital elements. For the first time an economical integration of many optical devices together with dense, high-speed analog and high-speed, low-power digital elements are possible in monolithic ICs. POET allows ODIS to fundamentally alter the landscape for a broad range of applications by offering components with dramatically lowered cost together with increased speed, density, and reliability.
A coming major force in the $515 Billion Military (FY2009 Dept. of Defense Budget) and $300+ Billion by 2010 (reported by Business Wire Inc.) Commercial Semiconductor Industries is Optoelectronics which meets the market need for high volume, rapidly growing optoelectronics, wireless and sensor market segments which demand greater bandwidth, increase processing power and integration, with lower power dissipation while being cost effective. These markets are established, but are at a threshold where a new technology or technical dislocation is needed. Lower-priced implementations will permit these markets to achieve their potential volumes along with additional applications being addressed. Products for these emerging markets are not served by silicon components, owing to the physical limitations of silicon. Solutions currently are based on high-cost hybrid manufacturing technology using Silicon Germanium (SiGe), Gallium Arsenide (GaAs), or Indium Phosphide (InP) technologies: a new solution is needed.
ODIS Inc. with its R&D facilities located on the campus of the University of Connecticut, has developed and proven a new semiconductor process based on a new Group III-V materials system. This process, POET (Planar OptoElectronic Technology), is uniquely capable of producing monolithic IC solutions to meet the emerging needs of these emerging markets. POET allows ODIS to produce IC's with dense packing of active optical elements together with packing of high-performance electronic elements at adensity similar to that of silicon. These monolithic implementations have a large advantage over today's hybrid-based solutions in density, reliability, and power dissipation, at a cost much lower than the best available competitors. ODIS will produce a market dislocation by providing monolithic IC components for these high volume high-performance markets with high-reliability, smaller, lower-power components at disruptively lower prices.
POET is differentiated from competing semiconductor processes, silicon, gallium arsenide, or indium phosphide by its more comprehensive set of elemental capabilities, and its ability to integrate them. POET can integrate lasers, modulators, photoreceivers, passive optics and high-speed, low-power electronics in monolithically-fabricated die that no other existing process can do so. This gives ODIS ICs their much lowercost structure, power savings and increased reliability. Patent and trade secret protection on POET, plus ODIS's specific design knowledge using POET elements give ODIS a large, defensible barrier to competition.
Market Conditions & Drivers:
Progress in the electronics industry over the past four decades has both driven and been driven by our ability to create and serve markets with faster, cheaper, and smaller monolithic integrated circuits. Each product advance in turn becomes the driver for the next wave of IC technology. Many new generations of IC technology from the earliest small-scale bipolar devices with 4 transistors through 0.09-micron feature size CMOS circuits with nearly 1-billion gate density have continually increased the ICs capabilities and thus those of the products in which they serve. Advances in PCs, communications, and many consumer devices have been powered by this continual development in semiconductor technology. Today however, this paradigm is falling short. Particularly in the arenas of optoelectronics and very high speed mixed-signal circuits silicon ICs will not serve, and no good monolithic (single-chip) technology exists. Today's implementations in these markets are not benefiting from the cost savings of integrated technologies, but rather are based on hybrid or multi-component approaches.
In the hybrid approach multiple individual semiconductor components of multiple technologies are interconnected to form circuits satisfying the needs of a particular application. This approach is used successfully to bring solutions to limited-size markets, particularly those in which performance is at a premium, but at a higher price. However, as the need for high-speed services spreads, and higher-volume markets emerge, this hybrid approach to implementation cannot produce competitive solutions. While hybrid technology will serve for limited-size markets, those able to tolerate higher price tags, it cannot serve truly large, competitive markets. A dislocation in technology is needed. Today's semiconductor industry is typically seen as being dominated by silicon products, with the silicon IC industry then being divided into the PC/memory segment and the fabless IC segment. The fabless business segment is then split into a triad of separate industries providing: design tools, IC designs, and IC fabrication, all operating independently but synergistically. While this is a good description of the silicon portion of the semiconductor industry, it is not a model of the whole semiconductor industry. Left unaddressed is a multi-billion dollar cost-sensitive market for analog, mixed-signal, RF, and optical products that is currently served by a combination of non-silicon technologies: Si-Ge (silicon germanium), GaAs (Gallium Arsenide), InP (Indium Phosphide), and GaN (Gallium Nitride).
(Possible sectors whereto POET can be licensed:) http://investorshub.advfn.com/boards/read_msg.aspx?message_id=71337879
(Scroll all the way to see all the different applications that can be made with GaAs:)
ODIS's new and patented semiconductor fabrication process, POET is based on a unique Group III-V materials structure. The heart of POET is a unique and patented Group III-V materials system that supports monolithic fabrication of IC's containing active & passive optical elements, together with high performance analog and digital elements. For the first time an economical integration of many optical devices together with dense, high-speed analog and high-speed, low-power digital elements are possible in monolithic IC's.
The processing of these wafers into products is done using a series of steps similar to those used in silicon processing, and is scalable to deep submicron feature sizes. POET device yield will thus be similar to that of silicon, much higher than that characteristic of many current III-V processes. This gives ODIS a technology basis that is uniquely powerful, that is economical to produce, and that is extensible in generations. POET is a uniquely-powerful mixed-signal process, integrating high-performance analog and digital electronics with high-performance active optical elements. ODIS ICs integrate a dense mix of active optical elements and optical waveguides together with logic and mixed-signal elements on a single chip, thus manufactured in one serial process. Capitalizing on POET capabilities, ODIS offers product solutions into the communications, optoelectronic, RF/wireless, sensor, and imaging markets. POET allows ODIS to fundamentally alter the landscape for a broad range of applications by offering components with dramatically lowered cost together with increased speed, density, and reliability. First Road map: (Page 18 from the Corporate Presentation)
Second road map: 'OPTICAL INTERCONNECTION OF HIGH SPEED CIRCUITS'
ODIS Inc. Progresses Toward a POET Technology Roadmap
Addressable Target Markets.
POET's technology platform for optoelectronic integration exploits the optoelectronic and electronic behaviors of Gallium Arsenide (GaAs) semiconductor material. One of the benefits of this material, from a space electronics perspective, is that GaAs is significantly less susceptible to x-ray and gamma-ray total integrated dose (TID) radiation. GaAs is the long-standing choice for high-frequency (e.g. RF) devices and circuits, although, GaAs digital devices do not provide the performance that Metal Oxide Semiconductor Field Effect Transistor, (MOSFET) devices provide.
Important to military applications are the electronic devices that can be integrated into the POET architecture including both complementary heterostructure field effect transistors and complementary heterojunction bipolar transistors. These transistors enable both analog and digital functions in POET hybrid optoelectronic devices. Important to the military is ODIS's ability to integrate digital, RF, and optical technologies in a single device makes POET an important, high-performance capability that satisfies documented needs for multiple space systems and all Military Departments and Agency Tech Areas.
Progress in the commercial electronics industry over the past four decades has both driven and been driven by our ability to create and serve markets with faster, cheaper, and smaller monolithic integrated circuits. Each product advance in turn becomes the driver for the next wave of IC technology. Many new generations of IC technology from the earliest small-scale bipolar devices with 4 transistors through 0.09-micron feature size CMOS circuits with nearly 1-billion gate density have continually increased the IC's capabilities and thus those of the products in which they serve. Advances in PCs, communications, and many consumer devices have been powered by this continual development in semiconductor technology. Today however, this paradigm is falling short. Particularly in the arenas of optoelectronics and very high speed mixed-signal circuits silicon ICs will not serve, and no good monolithic technology exists. A recent Electronic News Article stated that the optoelectronics market is forecast to surpass the discrete
semiconductor market and become the second largest segment in the semiconductor industry behind integrated circuits, * * * POET Technology Third Party Valuation by Pellegrino & Associates, Conference Call: POET Technology Valuation Conference Call. Part 1: Lee Pierhal. POET Technology Valuation Conference Call. Part 2: Pellegrino Valuation. POET Technology Valuation Conference Call. Part 3: Q&A Session with shareholders. * * *
according to a report published by industry researcher IC Insights.
Monetizing GaAs process, see also the Pellegrino Valuation Report:
On the defense side of the business, ODIS is working on a high-electron mobility transistor (HEMT) design that has now been validated by project partner BAE Systems, and is looking at how to monetize a decade-long development effort on POET led by Geoffrey Taylor, ODIS' chief scientist. Although the initial POET work has focused on transistors, including complementary n-channel and p-channel implementation (enabling a digital GaAs process technology analogous to silicon CMOS), the fabrication process is also said to be highly suited to optical applications. Those could include infrared sensing, single-chip designs combining lasers with electronic control, and the production of high-power beams from arrays of closely spaced lasers. As an example, ODIS has verified a strained-InGaAs quantum well VCSEL design, and has also demonstrated quantum dot structures operating at 1330 nm, while Taylor believes that with a slight adjustment to the process a 1550 nm design can be produced. That has been done by other organizations - notably QD Laser in Japan, which will manufacture around 1 million chips in 2011, according to O + P plenary speaker Yasuhiko Arakawa - but the difference with POET is that the laser could be integrated with a range of other active and passive devices in the form of an optoelectronic integrated circuit.
Although the approach sounds similar to that of the InP-based photonic integrated circuits (PICs) produced by the California company Infinera, a key difference is that GaAs is a much more mature semiconductor material. Taylor adds that POET combines GaAs transistor and optoelectronic functionality, unlike typical PIC processes. Thus far, ODIS's key customer has been the US Air Force, but now the company is looking towards developing commercial applications. High-speed optical interconnects would be one potential application area for the technology, since all of the optoelectronic and digital circuitry could potentially be integrated within the same chip architecture. ODIS was actively promoting the potential of the integrated technology platform at the SPIE Optics + Photonics event in late August through two technical presentations, focused on modulator designs and optoelectronic switching.
(See more info in the independent Pellegrino Valuation Report of the POET Technology in the DD section below)
************************* SBIR Awards: NASA, Department of Defense: US Air Force, US Navy, Missile Defense Agency: What is the Small Business Innovation Research (SBIR) program? Links on the NASA website to SBIR's: NASA SBIR (2010) Solicitation: Optoelectronic Infrastructure for RF/Optical Phased Arrays NASA SBIR: Optoelectronic Infrastructure for RF/Optical Phased Arrays. (TRL end of contract 5) NASA SBIR: Optoelectronic Infrastructure for RF/Optical Phased Arrays. (TRL end of contract 7) NASA SBIR Optoelectronic Infrastructure for RF/Optical Phased Arrays (Award details Phase 1) NASA SBIR Optoelectronic Infrastructure for RF/Optical Phased Arrays (Award details Phase 2) * * * Department of Defense: SBIR Research Centre List of SBIR Awards for the Department of Defense for ODIS: These are the SBIR's & STTR's that OPEL received before they were a publicly traded company: Department of Defense, US Navy SBIR (2010) Phase 1: Integrated Optoelectronics for Optical CDMA Department of Defense, Missile Defense Agency SBIR (2008) Phase 1: Photonic control technology for Phased Arrays * * * List of SBIR's for the Department of Defense, US Air Force: Department of Defense, US Air Force SBIR (2008) Phase 1: An Optically Switched Thyristor as a Thz pulse Source Department of Defense, US Air Force SBIR (2009) Phase 1: Thyristor-HFET logic based on optical signal transfer USAF (2009) Complete P1 Invited P2: Integrated wide-bandgap semiconductor photoconductive switch with a terahertz antenna Department of Defense, US Air Force SBIR (2009) Phase 2 Final: High Frequency Optoelectronic Oscillator Department of Defense, US Air Force SBIR (2009): High Bandwidth Optoelectronic Data Interfaces for Satellites Department of Defense, US Air Force SBIR 2009 Phase 1: Optoelectronic directional couplers for optical switching fabrics Department of Defense, US Air Force SBIR 2010 Phase 2: Optoelectronic Directional Couplers for Optical Switching Fabrics Department of Defense, US Air Force SBIR 2010 Phase 2: Monolithic InfraRed pixel structures enabled by Thyristor-HFET EO logic Department of Defense, US Air Force SBIR (2010) Phase 1: An Optoelectronic Ultra Low Power RAM * * * Technology Readiness Levels Demystified: http://www.nasa.gov/topics/aeronautics/features/trl_demystified.html ODIS was one of only 10 companies selected for the CPP in 2008: http://www.acq.osd.mil/osbp/sbir/docs/FY08-SBIR-Commercialization-Pilot-Program-Report-to-Congress.pdf US Department of Defense, Small Business Innovation Research Program (SBIR) & Commercialization Pilot Program (CCP): http://www.acq.osd.mil/osbp/sbir/docs/FY08-SBIR-Commercialization-Pilot-Program-Report-to-Congress.pdf * * * Defense Contracts: 10 Year of Government Contracts (Defense Department) Info for OPEL 10 Year of Government Contracts (Defense Department) Info for ODIS * * * Some of Dr. Geoffrey W. Taylor's Publications: Dr. Geoffrey W. Taylor' profile at University of Connecticut: Dr. Geoffrey W. Taylor in Author within SPIE Digital Library Content: Search results: "Dr. Geoffrey. W. Taylor" at the University of Connecticut site: * * * List of Patents: (OPEL/ODIS & Taylor & Uconn 36 in total) Here is a complete list of all the Patents: Newest Awarded Patent Details 20/12/2011: High Concentration Solar Photovoltaic Module 27/10/2010 * * * OPEL/ODIS + POET Mentioned in these articles (see MUCH more below): BAE Systems fabricates operational transistors using OPEL's POET platform: INTEGRATED PHOTONICS: GaAs modulator is first POET alternative to Si photonics:
"This next article is not specifically about POET, but it is interesting to understand IC's (Intergrated Circuits) with photonics and electronics combined. Its a nice read to get acquainted with the technology and it gives you an appropriate view and timeline of how & what the author of this article,and many experts in the field thought about it, and doubted if it was even possible to accomplish that at the time it was written. (2002) It might even help to mention that the CEO of OPL.V, Mr. Pierhal feels that this article is the best primer to understand POET..." http://www.usc.edu/dept/engineering/eleceng/Adv_Network_Tech/Html/publications/IEEESpectrum.8.8.02.pdf Startup Spotlight, also from 2002: http://www.lightreading.com/document.asp?doc_id=25191
Early work, Demonstration of an optoelectronic 4-bit analog-to-digital converter using a thyristor smart comparator: http://188.8.131.52/ft/809/22941/414945.pdf ************************* Team OPEL
Executive Team Members:
Brief Biography of the OPL Management:
* * *
"President & CEO of OPEL."
Mr. Pierhal has over forty years of management experience in Semi-Conductor, Telecommunications and Computing Technology development companies such as Amdahl Corporation, Intel Corporation, Masstor Systems Corporation, and Jupiter Technology. As a senior management executive with broad international experience, Mr. Pierhal has had direct responsibility for P&L, sales and marketing, and corporate development for several major companies requiring strategic expertise. He has experience with capitalizing and launching technology startups, mergers and acquisitions of technology companies, as well as turning around emerging companies by developing new sales divisions, channels and strategic partners. Mr. Pierhal has assisted a significant number of companies with capital formation and re-capitalization from private and public sources. He contributed exceptional strategic and tactical vision, strong team development and leadership skills. In addition, Mr. Pierhal has impressive experience in the area of technology startup company development and serves as an Outside Board Member to several such firms as well. Mr. Pierhal also remains as the President of ODIS, Inc.
* * *
"CFO and Treasurer."
Mr. Michael McCoy is Chief Financial Officer and Treasurer of OPEL International Inc. He was a founder of TranSwitch Corporation, a U.S. semi-conductor company, serving as its Vice President and Controller from 1988 to 2001 and most recently serving as its Corporate Secretary from 1988 to February 2006, as well as serving as a board member of TranSwitch India and TranSwitch Switzerland. Prior to TranSwitch, Mr. McCoy was a Divisional Controller with ITT Corporation. His 30 years of financial experience includes experience with public company SEC and NASDAQ reporting, as well as securing venture capital, public, bank and government agency financing. Mr. McCoy's education includes a BS/BA from Kent State University.
* * *
"Vice President of Engineering."
Dr. Javier Berrios joined Opel Solar in 2008 as vice president of engineering. He brings expertise in executive management, product development, and support for customer development. In 2006, he was vice president of engineering at Tego, Inc. developing RFIC semiconductors for RFID tags used in aerospace and high performance applications. Prior to that, Dr. Berrios was at TranSwitch Corporation where he held director positions in engineering developing VLSI solutions for telecommunications and data communications industry. Previously, at Pargain Technologies (presently ADC Telecommunications), he developed DSLAM systems for both central office and subscriber side. Dr. Berrios received his BSEE from La Salle Bonanova (Spain), his master's degree in electrical engineering from Union College and his PhD in electrical engineering from Worcester Polytechnic Institute.
* * *
"Vice President, Administation, Public & Gouvernment Relations."
Ms. Patricia Venneri Agudow is Vice President - Administration and Public & Government Relations of OPEL International Inc., with effect from June 21, 2011. She is responsible for OPEL's Corporate Governance Programs, Human Resources, Contract Administration, Public Relations, and Policy Management with Solar Industry Associations and Government bodies. Ms. Agudow comes to OPEL International with over 30 years experience in business management, specializing in human resources and corporate governance. She had a seven-year career with ITT Corporation in both telecommunications and manufacturing divisions - ITT Advanced Technology Center and ITT Flygt Corporation respectively. Then she spent 13 years with General Reinsurance Corporation where she held various senior management positions. Most recently, Ms. Agudow was Vice President, Human Resources with TranSwitch Corporation (NASDAQ: TXCC), where she built the human resources function and was heavily involved with corporation governance, equity programs, and mergers and acquisitions. She has had interaction at the Board of Director level for both TranSwitch and General Reinsurance. Ms. Agudow holds a Bachelor of Science Degree in Management and Industrial Relations from the University of Bridgeport. She has also completed executive business education at Babson College and Cornell University. She is affiliated with national management and human resources professional associations and build her association memberships in the solar and renewable energy industries.
* * *
Profiles of Officers & Represetatives of OPEL Technologies:
Interviews & Presentations with Officers & Represetatives of OPEL Technologies:
Dr. Samuel Peralta Biography:
Interview with Ms. Agudow:
Investors & Traders info: