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alan81

12/06/05 8:49 PM

#67452 RE: dacaw #67450

But here is the problem:
According to the AMD press release here:
http://www.amd.com/us-en/Corporate/VirtualPressRoom/0,,51_104_543~103048,00.html
resulting in a 40 percent increase in transistor performance compared to similar chips produced without stress technology
The PMOS has typically been about half the performance of the NMOS, so if they are now equal, the PMOS had to improve by 100%. The old DSL technique AMD used was worth about 30% performance boost on both PMOS and NMOS... so they are claiming the new 65nm strain technology is worth another 10%. How do we reconcile that with the claim that PMOS improved by 100%? I think something is fishy.
--Alan