Compound semiconductor materials have traditionally been difficult to manufacture due to crystal defects, some of which can be caused by a mismatch with nonnative substrates. The mismatch creates stresses at the interface, which propagate through the wafer causing cracks and other defects that have limited both the size and the yield of wafers, making economical manufacturing difficult. Atomera’s MST film can relax or de-strain the interface between two different crystal latices, and we’ve been filing a number of patents over the years related to this effect. Recently, we began working with one of the world’s leading authorities in compound semiconductor fabrication, Professor Edwin Pinar at Texas State University to investigate how MST could help solve this whole manufacturing problem.
A material which can significantly improve the quality of GaN wafers and potentially enable them to be manufactured at a larger size is a game changer that the industry is currently seeking. Early experiments growing GaN wafers using MST have shown very promising results. While we still have work to do, if our current trajectory continues, we should be able to enter the market and generate revenue much more quickly than in our traditional engagements with semiconductor customers, potentially even before the end of this year.
This could be pretty big imo.
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