Quote: In present System on Chip (SoC) applications, memory already dominates silicon area is steadily increasing with each generation. The most common types of embedded memory in current use are 1T/1C DRAM and 6T SRAM. As CMOS technology achieves sub 100 nm geometries, new memory devices are being considered for DRAM/SRAM replacement. However most of these new memories rely on the integration of exotic materials into a baseline CMOS process and require relatively large cells. Innovative Silicon has developed a true capacitor-less, single transistor DRAM - named Z-RAM for Zero Capacitor DRAM – by harnessing the floating body effect of Silicon on Insulator (SOI) devices. This technology is capable of achieving twice the memory density of existing embedded DRAM technology and five times that of SRAM yet requires no special materials or extra mask/process steps.
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