RFMD(R) Introduces World's First 6-Inch GaN-on-SiC Wafers for RF Power
Transistors
Company Converting All Gallium Nitride (GaN) Processes to High-Volume 6-Inch
Wafer Fabrication to Reduce Platform Cost, Address Growth Opportunities
GREENSBORO, N.C., Sept. 19, 2013 (GLOBE NEWSWIRE) -- RFMD (Nasdaq:RFMD), a
global leader in the design and manufacture of high-performance radio frequency
solutions, today introduced the world's first 6-inch GaN-on-Silicon Carbide
(SiC) wafers for manufacturing RF power transistors for both military and
commercial use. The company is converting all GaN production and development to
6-inch diameter wafers using its existing high-volume, 6-inch GaAs foundry to
reduce platform cost for the growing GaN device market.
"We are pleased to introduce the industry's first 6-inch GaN-on-SiC RF
technology on RFMD's existing high- volume 6-inch GaAs manufacturing line,"
said Bob Bruggeworth, president and CEO of RFMD. "This merging of production of
GaN and GaAs is part of our 'GaN-in-GaAs Fab' strategy to repurpose existing
fab capacity to better address growth opportunities from innovative new
GaN-based products."
According to industry analyst firm Strategy Analytics, the GaN
microelectronics market is expected to more than triple to $334 million by
2017, representing a compound annual growth rate (CAGR) of 28%. This market
growth is led by growth in both military (radar, electronic warfare,
communications) and commercial (power management, cellular, CATV, land mobile
radios) applications.
"By leveraging our technology leadership and high-volume expertise in 6-inch
GaAs production, RFMD will now be able to add 6-inch GaN capabilities to
deliver new RF Power products that we expect will accelerate revenue growth in
our communications, CATV, power conversion, radar, jamming, aerospace and open
foundry businesses," said Dr. Jeff Shealy, vice-president of RFMD Power
Broadband.
GaN technology supports broad frequency bandwidths and high breakdown
voltages in a small area. A 6-inch GaN wafer offers 2.5-times more useable area
over competing 4-inch GaN wafer platforms currently available, resulting in 2.5
times more RF power devices per wafer. Larger area-per-wafer and subsequent
lower cost per unit area (in dollars per square millimeter) is key to enabling
affordable, high performance power monolithic microwave ICs (MMICs) for
military and commercial applications. RFMD expects to complete qualification of
its 6-inch GaN platforms in 2014.
