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Samsung makes handset headway with OneNAND.
http://www.digitimes.com/NewsShow/MailHome.asp?datePublish=2005/11/11&pages=PR&seq=203

Samsung makes headway in handset market with OneNAND flash, introduces 90nm 512Mbit mobile DRAM

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Press release; Esther Lam, DigiTimes.com [Friday 11 November 2005]

Samsung Electronics reported that its production volume of OneNAND flash has jumped by 89% over the past four month, and the company is producing about 2.9 billion megabits per month. In addition, Samsung announced its has started mass producing 90nm-made 512Mbit mobile DRAM.

According to the company, OneNAND is a fusion chip that features a single-level-cell NAND core with SRAM and logic elements to emulate a NOR flash interface. OneNAND provides a sustained data "read" speed of 108 MB/s, four times faster than conventional NAND flash memory, and a "write" speed of 10 MB/s, more than 60 times faster than multi-level-cell NOR Flash memory.

Samsung has initially targeted the handset market with the fusion chip, and three of the top five wireless equipment manufacturers have deployed OneNAND flash in their handsets, Samsung said.

In line with its deployment of OneNAND flash for the mobile market, Samsung recently also announced it has started to mass produce 90nm-made 512Mbit DRAM for mobile products. The company can also provide 1Gbit capacities when two 512Mbit chips are stacked together in a dual-die package

The 512Mbit mobile DRAM chip transmits data in a 32-bit stream and can process it at 1.3GB per second, and the company stated the memory can enhance the performance of managing richly textured images on handsets, as well as lowering overall power consumption.