Advanced Micro Devices Inc (AMD)

[chipdesigner]

Thanks for that link, proving wbmw wrong:


•Thicker gate oxides (GOX)
– Reduced static gate leakage caused by tunneling
– Reduced gate capacitance
– More reliable (Great for servers)
• Longer nominal channel length reduces static leakage
• Dual Gate Oxide : two gate oxide thicknesses on die
– Thinner GOX for core transistors – not as thin as desktop process target
– Thicker GOX for on-chip decoupling capacitors – reduces gate leakage
– Thicker GOX transistors in I/O power domain
• Three threshold voltages
– High Vt transistor has low leakage, low performance
– Medium Vt has higher leakage and 10% higher drive current
– Low Vt has very high leakage and another 10% higher drive current
– Vt levels (and therefore leakage) are targeted for low power



It really is amazing that he claims all A64s are the same, but for fuses.