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Re: wbmw post# 52736

Wednesday, 02/23/2005 12:12:53 AM

Wednesday, February 23, 2005 12:12:53 AM

Post# of 97712
Like I said before, I expect a 25% or greater improvement in frequency at the same power from 90nm to 65nm.

There is unlikely to be a frequency-independent %-gain at the same power. If you expect this regarding 3.2GHz 90nm having the same power as 4.0GHz 65nm, I think you'll be sorely disappointed.

That would imply 65nm 4.0GHz low power bins can manage to dissipate only 53% to 65% of the power of 90nm 4.0GHz low power bins. (depending on whether you guess 130W or 150W for low power 4GHz 90nm single core.)

I don't think you're going to get that much of an improvement.

And if Smithfield requires LV tricks, which seems likely, if they want any yields at all (the chances of two ultra-low-leakage parts occuring side-by-side being very low indeed), that implies additional troubles with increasing the clock.

Be happy if they manage 4GHz single core parts with 65nm.
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