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Re: briankerecz post# 2

Tuesday, 07/23/2002 9:52:38 PM

Tuesday, July 23, 2002 9:52:38 PM

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Varian Semiconductor Announces New VIISta Platform Offering
VIISta 810 HP Single Wafer Ion Implanter Extends VSEA's Market Leadership Position in Medium Current
GLOUCESTER, Mass.--(BUSINESS WIRE)--July 22, 2002--Varian Semiconductor Equipment Associates, Inc. (NASDAQ: VSEA - News), the leading supplier of ion implantation systems, today introduced the VIISta 810 HP single wafer medium current ion implanter.

This system provides increased productivity and faster system installation, reducing customers' time to first wafer out and speeding their return on investment.

"As the industry moves toward smaller device geometries, the new VIISta 810 HP (High Productivity) implanter is the optimum successor to the industry-leading VIISta 810 implanter," said John Aldeborgh, vice president of sales and marketing for Varian Semiconductor. "The advantages of single wafer processing on the VIISta 810 HP and the VIISta platform include individual wafer statistical process control, enhanced productivity over older-generation spinning disk multi-wafer systems, and increased process flexibility for advanced applications including high tilt halo implants. In addition, the VIISta 810 HP provides precise total incident angle and dosimetry control to enable tighter distribution of electrical device parameters and a 50% reduction in contamination to enhance device yields."

Ernest Godshalk, president and chief operating officer of Varian Semiconductor remarked, "With the introduction of the VIISta 810 HP single wafer medium current ion implanter, Varian Semiconductor extends its lead in the marketplace by offering the most cost effective and technologically innovative ion implanters to meet the demanding requirements of the industry's most advanced device geometries."

The VIISta platform of parallel beam, single wafer implanters covers the entire range of ion implantation requirements, from 200eV through 3.75 MeV. The benefits of parallel beam systems center around their ability to precisely place dopants in the device structures.

Each implanter in the VIISta platform offers specific advantages in terms of integrated circuit performance. For high current implants, the VIISta 80 presents an opportunity to improve junction abruptness control and increase the drive current and processing speed. For medium current implants, the VIISta 810 HP provides exceptional control of the Vt and halo implants, improving the consistency of operating characteristics and yield across the wafer. For high energy implants, the VIISta 3000 provides additional accuracy in the placement of dopant species to enhance well-to-well isolation characteristics, reducing the size of the transistors and increasing the number of integrated circuits on the wafer. The VIISta P2LAD ultra low energy ion implanter combines pulsed-plasma doping with the VIISta platform functionality to overcome the significant technical challenges presented by the requirements of low energy doping for ultra shallow junctions.

About Varian Semiconductor

Varian Semiconductor Equipment Associates is the leading producer of ion implantation equipment used in the manufacture of semiconductors. The company is headquartered in Gloucester, Massachusetts, and operates worldwide. Varian Semiconductor maintains a web site at www.vsea.com. The information contained in the Company's web site is not incorporated by reference into this release, and the web site address is included in this release as an inactive textual reference only.

Note: This release contains forward-looking statements for purposes of the safe harbor provisions under The Private Securities Litigation Reform Act of 1995. For this purpose, the statements concerning the anticipated customer benefits of the new product discussed in this release are forward-looking statements and any statements using the terms "believes," "anticipates," "expects," "plans," or similar expressions are forward-looking statements. There are a number of important risks and factors that could cause actual events to differ materially from those suggested or indicated by such forward-looking statements. These include, among others, the possible failure of the new product to provide the anticipated customer benefits or to achieve significant market acceptance, volatility in the semiconductor equipment industry; economic conditions in general and as they affect the Company's customers; significant fluctuations in the Company's quarterly operating results; the impact of rapid technological change; the Company's dependence on the development and introduction of new products; the Company's concentration on ion implantation systems and related products; concentration in the Company's customer base and lengthy sales cycles; the highly competitive market in which the Company competes; risks of international sales; foreign currency risks; and general economic conditions; and other factors identified in the Company's Annual Report on Form 10-K, and the most recent Quarterly Reports on Form 10-Q filed with the Securities and Exchange Commission. The Company cannot guarantee any future results, levels of activity, performance or achievement. The Company undertakes no obligation to update any of the forward-looking statements after the date of this press release.