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Saturday, 09/26/2009 5:40:00 PM

Saturday, September 26, 2009 5:40:00 PM

Post# of 50030
SUNV You better drop by the thread and check the DD the Chart is setting up major Form 4 inside buys and huge PR just out. Sentor Dick Durban just gave the company 9 million dollars in Federal Funding September 10th.
http://durbin.senate.gov/showRelease.cfm?releaseId=317686

Inside buy link : http://www.pinksheets.com/edgar/GetFilingHtml?FilingID=6780022

Sunovia Researchers Shatter World Record Open Circuit Voltage (Voc) for Cadmium Telluride (CdTe) Thin Film Solar Cells by over 45%, Dramatically Raising the Theoretical Potential Efficiency of CdTe Thin Film Solar Cells
9:30a ET September 24, 2009 (PR NewsWire)
Sunovia Energy Technologies, Inc. (OTC Bulletin Board: SUNV) and partner EPIR Technologies, Inc. ("the Partners" or "Partnership") announced today that they have fabricated single-junction and two-junction cadmium telluride (CdTe) based solar cells that have far surpassed the long-standing world record open circuit voltage (Voc) for thin film CdTe solar cells.

The Partners' single-junction and two-junction devices exceeded the highest Voc values ever reported publicly by research institutions on thin film CdTe solar cells (including NREL and others) by over 45%.

They called the Voc breakthroughs significant because the amount of electric power generated by a solar cell is directly proportional to its open circuit voltage. So doubling the Voc of a solar cell results in a doubling of power output, if all other characteristics remain the same.

So the results reported by the partners will enable the companies to create solar cells with much higher efficiencies than other CdTe-based solar cell technologies.

Open circuit voltage has traditionally been the most difficult performance metric to optimize in CdTe solar cells and the Partners' CdTe-based (also known as II-VI materials) solar cells achieved open circuit voltages of 1.34 V and 1.75 V in the single-junction and two-junction configurations, respectively. The 1.34 V value in the single-junction configuration is more than 95% of the theoretical upper limit for the II-VI alloy used by the Partners. In contrast, the highest reported Voc for a CdTe solar cell is 0.91 V, representing about 76% of the theoretical maximum for CdTe. By fabricating II-VI solar cells with open circuit voltages close to the theoretical upper limit for the materials utilized, the Partners have developed next-generation, high efficiency CdTe-based solar cells, which will accelerate the push of clean solar-generated electricity towards grid parity.

The Partners recently announced the expansion of their pilot production facilities, and are working to complete the initial 100 MW of manufacturing capacity. Their proprietary cell manufacturing process requires substantially less space than competing solar technologies, and is scalable at a fraction of the previous cost. The utilization of a silicon (Si) substrate greatly lowers manufacturing costs and allows the Partners to employ proven manufacturing techniques and equipment developed over more than 40 years during the evolution of the micro-chip industry.

According to Dr. Michael Carmody, Senior Director for Development of Photovoltaic Materials at EPIR Technologies, "These are by far the highest Voc measurements ever exhibited by a CdTe-based solar cell. There is no data in the literature that comes close to what we have achieved, and we believe that our two-junction device also represents the first ever high efficiency monolithic, two-junction solar cell using CdTe or any other II-VI material. The company's two-junction II-VI on Silicon design will reach production efficiencies over 35% and will cost only a small fraction of the cost of three-junction III-V solar cells. Three-junction II-VI on Silicon cells will have even higher production efficiencies without much added cost."

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