Nanopierce Technologies (NPCT)

[Cool_Hand]

RW,

After reviewing the Silicon-on-insulator (SOI) technology and your question:

"Does any of our Nanopierce tech have a need to use SOI?"

I would say that "SOI Technology" would be more willing to use NPCT technology than NPCT depending on SOI.

The SOI technology gives the industry more ability to pack electrical components closer on a piece of silicon wafer.

The insulator film they talk about prevents "Bleed Over" of either small amounts of electricity, or frequency (RF) signals from interrupting each other, that can create havoc on the chip.

Moores law of doubling transistor every year and 1/2 can be maintained with SOI wafers.

Also NPCT technology would work "Very Nicely" with this process completing the connections on the SOI wafer, a very superior product would result - Bring It On Home!


Best Regards,

Cool Hand


More info about SOI technology:

As semiconductor manufacturers pursue faster, smaller, more power-efficient chips, the electrical leakage from transistors into the underlying silicon, typical of most CMOS devices, can no longer be tolerated. In fact, power consumption and related heat dissipation issues have been identified as the most serious obstacles to keeping pace with Moore's law. Silicon-on-insulator (SOI) wafers contain a thin layer of insulating oxide just below the thin top layer of silicon where the active transistors are located. This insulating layer greatly reduces the electrical leakage into the substrate, resulting in devices that are up to 35 percent faster or use up to 85 percent less power.

Separation-by-IMplantation-of-OXygen (SIMOX) refers to a technique used by Ibis for manufacturing SOI wafers where an oxygen implanter creates the insulating layer within the wafer. Compared to competing technologies, the SIMOX process offers high quality SOI wafers at competitive costs in production quantities.

As more and more chipmakers adopt SOI technology, there is a need for growing quantities of SOI wafers. In particular, the availability of 300-millimeter SOI wafers is regarded as a major catalyst for broader adoption of SOI technology. The i2000 implanter, with its ability to produce both 200- and 300-millimeter wafers, addresses this market.