NVE Corporation (NVEC)

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NVE Notified of Grant of Magnetothermal MRAM Patent

EDEN PRAIRIE, Minn.—September 4, 2007—NVE Corporation (Nasdaq: NVEC) announced today that it has been notified by the U.S. Patent and Trademark Office (USPTO) of the expected grant of a patent relating to magnetothermal Magnetoresistive Random Access Memory (MRAM).

NVE has been notified that the patent, titled "Magnetic Memory Layers Thermal Pulse Transitions," will issue today. The patent is number 7,266,013 and covers inventions by Dr. James M. Daughton and Dr. Arthur V. Pohm. The grant is in addition to similarly-titled patent numbers 7,177,178 and 7,023,723.

MRAM is an integrated-circuit memory which is fabricated with nanotechnology and which uses electron spin to store data. MRAM may have the potential to combine many of the best attributes of different types of semiconductor memories.

Magnetothermal MRAM is a next-generation MRAM technology that uses a combination of ultra-fast magnetic fields and heat pulses, both from electrical current, to reduce the energy required to write data and allow reduction of the memory cell size while maintaining thermal stability.

Magnetothermal MRAM may have the potential to increase MRAM density, increase speed, and reduce power, all of which could enable broader MRAM use in the future.

The grant brings NVE's U.S. patent total to 45. The company has more than 100 patents worldwide issued, pending, or licensed from others. Links to the new patent and NVE's other U.S. patents can be found at the "About NVE" section of the company's Website (www.nve.com).

NVE is a leader in the practical commercialization of spintronics, a nanotechnology that many experts believe represents the next generation of microelectronics. NVE licenses its MRAM intellectual property and sells spintronic products, including sensors and couplers, to revolutionize data sensing and transmission.