Intel Corp (INTC)

[VBG]

Thanks for the link to the IEDM papers.

The thing that surprised me most was the lack of scaling of gate length. Apparently gate length has hit a wall like oxide thickness did at 65nm. HK/MG is a way around the oxide barrier for several generations, but what is the way around S->D leakage at small Lgate? FD-SOI helps, but I don't believe it eliminates the leakage, just reduces it somewhat. And FD-SOI is expensive. Maybe tri-gate will allow performance improvements to continue, but if HK/MG is the biggest change in the transistor in 40 years, tri-gate is even bigger.

-VBG