Atomera Inc (ATOM)

[Theo]

'nother shoutout in EE|TIMES quoting $ATOM :

Can the Optane Gap Be Filled?

"Smaller transistors might enable emerging memory candidates

Magnetoresistive random-access memory (MRAM) could be a candidate to fill the NAND–DRAM gap, and Atomera’s Mears Silicon Technology (MST) could help it get there. Atomera was founded in 2001 by Robert Mears, who also serves as CTO, with a vision to develop a platform of materials technologies for use across multiple industries. MST was spurred by the slowdown in advancement of Moore’s Law and uses atomic-level materials science to deliver multiple power, performance, area and cost (PPAC) benefits.

MST’s ability to improve PPAC is showing promise in advancing MRAM to a point at which it will finally be able to transition from a niche memory to mainstream and potentially fill the gap between NAND and DRAM left by 3D XPoint, Jeff Lewis, Atomera’s SVP for business development and marketing, told EE Times in a briefing. The company is enhancing transistors to get more capability from them by applying a quantum engineering film. “It applies to all nodes, so it’s not just memory,” Lewis said, adding that Atomera licenses this technology out to device makers to incorporate into their products.
Atomera’s MST technology can significantly increase the mobility of electrons and holes, which enables semiconductor devices to provide more current for the same voltage. It can also shrink transistors in memory devices like MRAM, which could allow for it to become a non-volatile option to fill the NAND/DRAM gap.

MST does not just apply to memory; the underlying technology could also be applied to analog power switches, for example. In general, Lewis said, MST enables increased carrier mobility and drive current, which is applicable to a variety of integrated circuit types. Improved mobility at high and low fields have already been demonstrated during third-party evaluations, he said, as well as drive and effective current increases of 10% to 20%.

MST also enhances the reliability of the device, Lewis added. “You can actually overdrive it without wearing it out.” The many benefits add up to the point where it is possible to increase the current drive of the same-sized transistor by as much as 52%. In addition, an MRAM array could be significantly shrunk if the transistor is smaller, and shrinking is a well-understood value proposition because it reduces cost, according to Lewis.

The benefits of MST all play into addressing the key challenge for an emerging memory if it is to displace an incumbent technology, such as DRAM—cost per bit. “People have talked about MRAM as being a potential replacement, but from a cost-per-bit perspective, it still hasn’t approached near-DRAM levels,” Lewis said, adding that he thinks the non-volatility and low-power profile of MRAM is undervalued. “We are focused on MRAM because that seems to be taking over as the de facto standard, certainly for embedded memories.”

The kick in the nuts though- from Objective Analysis’s Jim Handy:

"But filling the NAND–DRAM gap with another layer is tough because it is really difficult to make something cheaper than DRAM, he added. “And if isn’t cheaper, there’s no reason to put a layer in between memory and NAND flash."