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Sunday, September 24, 2017 8:00:03 PM
Morphology, composition and electrical properties of SnO2:Cl thin films grown by atomic layer deposition
Abstract
Chlorine doped SnO2 thin films were prepared using atomic layer deposition at temperatures between 300 and 450°C using SnCl4 and H2O as the reactants. Composition, structure, surface morphology, and electrical properties of the as-deposited films were examined. Results showed that the as-deposited SnO2 films all exhibited rutile structure with [O]/[Sn] ratios between 1.35 and 1.40. The electrical conductivity was found independent on [O]/[Sn] ratio but dependent on chlorine doping concentration, grain size, and surface morphology. The 300°C-deposited film performed a higher electrical conductivity of 315S/cm due to its higher chlorine doping level, larger grain size, and smoother film surface. The existence of Sn2+ oxidation state was demonstrated to minimize the effects of chlorine on raising the electrical conductivity of films.
Morphology, composition and electrical properties of SnO2:Cl thin films grown by atomic layer deposition. Available from: https://www.researchgate.net/publication/283666514_Morphology_composition_and_electrical_properties_of_SnO2Cl_thin_films_grown_by_atomic_layer_deposition [accessed Sep 24, 2017].
https://www.researchgate.net/publication/283666514_Morphology_composition_and_electrical_properties_of_SnO2Cl_thin_films_grown_by_atomic_layer_deposition
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