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Re: ffoggy post# 51

Sunday, 04/19/2015 1:28:23 AM

Sunday, April 19, 2015 1:28:23 AM

Post# of 431
No, not 100% positive...but pretty sure. Right now ipwr uses 2 igbt/diode paths to and from the magnetic inductor where the energy is temporarily stored. The igbts being of the common silicon variety. Can't see how it would make much of a difference if they swapped in the higher priced SiC mosfet transistors, other than they might have to tweak the SW a bit to take advantage of the faster switching times available via the mosfets, they would also probably reduce the heat dissapation thing they have now as the mosfets supposedly run cooler.

But...they plan on doing those tweaks anyway for their new bd-igbts, however, I imagine it would vary somewhat from their bd-igbt redesign if they decided to go with the cree mosfets.

My only caveat would be it does make it harder (right now...without their new bd-igbt operational) for ipwr to compete against companies that might use these new mosfets to make straight, plain, vanilla, inverters...IF ipwr was interested in competing in that space, which they are not, as they have made clear (too much price pressure, and it doesn't really take advantage of their unique technology).

Having said all this...I do believe it would make and excellent question to give to Matt Hayden (their IR guy) to submit to management at the 1st quarter CC next month. (They answered my questions a few quarters ago that I submitted to Matt via email concerning gross profits). In fact, it might provide some excellent color on the state of their new bd-igbt, and any tech. threats they may perceive...
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