AVTO METALS RECEIVES PATENT FOR QUANTUM TRANSISTOR
Gibraltar, 7 April 2011
Avto Metals plc has received a U.S. patent for a new type of quantum transistor that
could make possible smaller, more powerful electronic devices of all sorts. The
technology uses a recently-discovered quantum interference effect that will enable
transformation of existing materials into materials with precisely-defined properties
for almost any electronic application.
"This fundamental improvement in the underlying physics of transistors should
translate to more advanced electronic devices of all kinds that are more reliable,
faster, and ultimately cheaper," said Isaiah W. Cox, president of Avto Metals plc,
which is developing the technology
The new patent, U.S. 7,893,422, titled "Transistor on the Basis of New Quantum
Interference Effect," reflects discoveries by Avto Metals Principal Scientist, Avto
Tavkhelidze.
In recent years, much research has been directed toward the development of quantum
transistors. Forms that have been proposed include the Aharanow-Bohm quantum phase
transistor, quantum well transistor, quantum-tunnelling transistor, and quantum
diffraction transistor.
The Avto transistor, instead, exploits the wave properties of electrons, which become
useful only when the dimensions of a structure reach nanoscales. New capabilities to
fabricate materials at nanoscales make possible many new technologies and products by
modifying the surface geometry of a material in such a way that the wave properties
of electrons become significant. The transistor disclosed in the new patent is one
such future technology.
The patent describes a quantum interference transistor that comprises a thin metal
film, an insulating layer above, and a smaller metal island on top. A potential
barrier created by quantum interference exists in the film when the external voltage
is zero. When a positive voltage is applied to the island, the barrier disappears and
the flow of current in the island is controlled, thus enabling the transistor-like
property of switching between open and closed states.
The net benefit of this new transistor is a more perfect "open" or "closed"
condition, resulting in lower leakage currents, lower noise, and lower power
consumption of devices built with these transistors. The technology can be employed
in most modern semiconductor manufacturing processes.
Avto Metals is developing and licencing a variety of technologies exploiting the
quantum interference effect, and expects to licence the quantum transistor technology
to an electronics manufacturer.
Avto Metals plc, based in Gibraltar, is a subsidiary of Borealis Exploration Limited
(US OTC: BOREF), a technology development holding company whose subsidiaries are
developing new technologies including the Chorus Motor, ideal for electric or hybrid
vehicles; the WheelTug aircraft electric drive system, which enables aircraft to taxi
without using jet engines; new technologies for efficiently producing electrical
power or cooling using quantum electron thermotunnelling; and photoelectric devices
to more efficiently convert solar energy into electricity.
For more information contact:
Dr. Hans Walitzki
Director, Product Development
Avto Metals plc
hansw@avtometals.gi
Avto Metals website: www.avtometals.gi
Borealis website: www.borealis.gi