Replies to post #219631 on Lightwave Logic Inc (LWLG)

[MeteoricSphinx41]

I think this will surpass TFLN shortly on the totem pole, let’s see how companies are reacting around ECOC this year ;) Mark L might be changing his tune in the near future

[atlsutiger]

“Current inorganic alternatives in silicon photonics transceivers, such as lithium niobate (LiNbO3) thin-film modulators or indium phosphide (InP)-based devices, exhibit near-zero degradation (<0.5% absorbance change) in equivalent tests, but they come with trade-offs like higher drive voltages (increasing power consumption by 20-50% or more) and challenges in dense integration with silicon platforms.“

-Grok4

[rikkie]

I keep saying it, "perkinamine" is the best of the best. There's simply no alternative. I've mentioned it many times, but name me a single product or company with better features or qualities, and I've NEVER gotten a response.
Competition will fade away like snow in the sun, mark my words!

[prototype_101]

worth another LQQK, I searched for whether any TFLN devices have met this high standard of the Telcordia GR-468 85/85 stress test and I could not find any. With the manufacturing hurdles TFLN offers, if you can't prove the gold standard of reliability than you will mostly lose out to other materials and devices that can.

As KC said yesterday, OpenLight Photonics passed Telcordia guidelines for all active components its PDK. They announced this in March 2025. They mostly rely on indium phosphide to improve their photonic integrated circuits. Smart outfit I would say avoiding TFLN.

When I searched for OpenLight Telcordia testing, I did not mention LWLG but Open AI has already added that LWLG has done so as well in the OpenLight search that I did. LWLG has clearly made a statement that is hard to ignore.

Thin-Film LiNbO3 (TFLN) versus LWLG Electro-optic Polymers

Performance

Thin-Film LiNbO3 (TFLN)
- r33 intrinsically capped at ~ 31 pm/V at 1310 nm
- n = 2.2, er = 30 (high dispersion across frequencies)

LWLG Electro-optic Polymers
- No intrinsic cap on r33 (> 200 pm/V at 1310 nm easily achieved)
- n ˜ 1.9, er ˜ 3-6 (low dispersion across frequencies)

Integration

Thin-Film LiNbO3 (TFLN)
- Integration with Si/SiN very low yielding & basically still in R&D stage
- Limited wafer size (150 mm)
- Large device footprint (sub-cm scale)
- High material cost w/ only one supplier (NanoLN)

LWLG Electro-optic Polymers
- Fully Si compatible
- Easily scalable to 300 (+) mm wafer
- Very small device footprint (sub-mm scale)
- Low material cost

Processing

Thin-Film LiNbO3 (TFLN)
- Thin film uniformity becomes difficult as wafer size scales up
- Specialized processing/tools needed – leads to higher costs
associated with processing, QC, etc.

LWLG Electro-optic Polymers
- Spin-coating produces films with high uniformity
- No specialized processing/tools needed (completely compatible
with existing Si foundry processes/tools) – reduces costs
associated with processing, QC, etc

Slide 13 from 2025 LWLG ASM presentation found here,
https://irp.cdn-website.com/a5f8ef96/files/uploaded/2025_ASM_Presentation_-_FINAL-40e13d6a.pdf

Where are you Mark Lutkowitz? Here I even DETAILED the differences Yves pointed out on Slide 13 here for you!!!!