Thursday, January 29, 2015 8:33:51 PM
Recent advances in silicon-based passive and
active optical interconnects
Harish Subbaraman,1, Xiaochuan Xu,1,2 Amir Hosseini,1,2 Xingyu Zhang,2
Yang Zhang,2 David Kwong,2 and Ray T. Chen2
1 Omega Optics, Inc, 8500 Shoal Creek Boulevard, Building 4, Suite 200, Austin, TX 78757, USA
2 Department of Electrical and Computer Engineering, The University of Texas
IMO this is the most relevant part:
"Recently L. Alloatti et al., demonstrated a 100GHz modulator in an EO polymer filled silicon slot waveguide [208]. A backgate structure was utilized to improve the RC constant[204]. Such a silicon:organic hybrid technology holds tremendous potential for realizing ultrahigh
speed optical interconnect components in the future. Silicon-hybrid plasmonic optical interconnects is another rapidly evolving technology.
Due to the reduction of mode size much below the diffraction limit, extremely compact devices (sub-100nm dimensions) can be realized [209–213]. Several passive and active components have been proposed and demonstrated, including power splitters [214, 215] and polarization splitters/converters [216–221], microring resonators [222–225], modulators[226–231], switch [232]. A review on recent developments can be found in [233]. In [229], by combining a plasmonic waveguide with nonlinear polymer, a 29µm long 40Gbps phase modulator was demonstrated. Although plasmonics can achieve very dense integration, one of the main concerns is the high loss (~1-2dB/µm) associated with the waveguides. Active work is currently being pursued in exploring new materials, including copper, titanium nitride, etc for reducing the loss [224, 227, 243, 235], which may lead to a good compromise between loss and device size in the future."
http://www.opticsinfobase.org/view_article.cfm?gotourl=http%3A%2F%2Fwww%2Eopticsinfobase%2Eorg%2FDirectPDFAccess%2F31F274A0-ECB6-08DB-63DED2E48E371AB4_310917%2Foe-23-3-2487%2Epdf%3Fda%3D1%26id%3D310917%26seq%3D0%26mobile%3Dno&org=
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